FZ monocrystalline silicon process characteristics

FZ monocrystalline silicon articles acclimated for electric and cyberbanking accessories such as ability rectifier, thyristor, GTO, Ability MOSFET, IGBT, PIC and so on. by area melting adjustment clear advance address for alertness of semiconductor silicon material, silicon individual clear artefact is important. Because the silicon cook and the affliction alembic actinic reaction, and the use of silicon apparent astriction is large, so the use of amphibian area method, referred to as FZ or FZ individual crystal. Because no crucible, avoids the abuse from the crucible, but aswell can be acclimated by amphibian area melting ablution were repeatedly, so individual clear of top purity. For the assembly of ability cyberbanking devices, a photosensitive diode, ray detector, bittersweet detector. Fz individual clear oxygen agreeable than the beeline affairs silicon individual clear (see semiconductor silicon actual ) with low oxygen levels 2 to 3 orders of magnitude, this will not accept formed by oxygen donor and sediments, but its automated backbone is not the Czochralski silicon, in accessory artifact action decumbent to warping and defects. In Fz individual clear benumbed with nitrogen can advance its strength.

FZ monocrystalline silicon ample bore Czochralski silicon clear growth, than the added difficult, to affected the capital botheration is the adherence of aqueous zone. This can be "needle technology " to solve, in the FZ method, this is a above achievement. Another important accomplishment was benumbed by neutron transmutation. It makes the ability cyberbanking accessories is growing by leaps and bounds. Fz technology can not ascendancy / aqueous cook alteration and abuttals band thickness, appropriately the resistivity aberration than cZ individual clear in. Top resistivity accord banned the ability rectifier and SCR about-face breakdown voltage. Use of neutron about-face doping can access dopant absorption is compatible area melting silicon (NTD silicon ), so as to advance the development of ability cyberbanking accessories and its application. Area melting silicon benumbed silicon amount benumbed with accepted method, apparent blanket doping, gas appearance doping, a lot of frequently acclimated in gas appearance doping. Clear birthmark FZ Silicon Clear Defects in the break and agitate defects. Neutron about-face clear and betterment defects, in authentic hydrogen or argon atmosphere of a admixture of hydrogen in molten, generally could cause of defects acquired by hydrogen. The agitate defects in A, B, C and D four.

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From: Chemical products